Recent technologies provides voltage controlled power electronic switches which require very low drive power. This advantage can be used to improve power electronic converters due to reduced losses in the drive circuits, as well as a low number of components. Using these advantages in self-oscallating power inverters will enhance simplicity and efficiency. Two families of self-oscallating MOS-based converters, namely the linear and the nonlinear versions, are distinguished. With the linear version, no core material is saturated, which enables a very high switching frequency. With the nonlinear version, a large regenerative turn-off snubber capacitor is connected in parallel with each of the semiconductor switches to achieve zero voltage switching. The latter improves the performance of the converter regarding the switching losses and EMI, and is suitable for the use of IGBTs and MCTs at very high power levels. This study includes the use of MOSFETs and IGBTs in self-oscallating DC-DC conveters at power levels of several kilowatts.
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