The development of IGBT devices is still moving ahead faster devices with lower losses. This paper will focus on charcterization of a third generation IGBT-module and a second generation IGBT-module with improved free-wheeling diodes where especially the power losses are compared in different test conditions. The characterzization is done on an advanced measurement system which is described. The diodes in the IGBT-modules are also investigated because it can be a limiting factor in many applications. Finally, short circuit tests are performed and a comparison of the two modules is done. The comparison shows the third-generation IGBT has the best short circuit capability and lowest on-state losses, while the second generation IGBT has the lowest switching losses.
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