Designers in power electronics use IGBT because of its attractive electrical characteristics and its short-circuit withstand capability. Unfortunately, it is very difficult to forecast the IGBT safe operating area in short-circuit conditions (short duration and large power) because the thermal response curves obtained with the classical thermal model are not accurate in such conditions. The aim of this paper is to present a study of the device temperature rise during the short-circuit. The values of the silicon temperature inform the user on the possible damage occuring in the device. Furthermore, this can help the user to determine the physical failure mode and to design an appropriate fault protection scheme.
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