For power applications derived from an industrial supply network, a galvanic insulation is usually required between the power stage and the control circuits. In practice, for high galvanic insulation, it may be difficult to achieve a power device materially seperated from the signal processing part. A good tradeoff consists of associating control detection and amplification circuits and control defect detection circuits with each power switch. In this paper, the performance of a M.O.S.-Gated optically triggered thyristor is presented to illustrate capabilities of new power structures based on the functional integration concept. An application of this device to a resonant converter is also given.
| Filename: | EPE Journal -06-2 - 2 - Paper Patel |
| Filesize: | 782.3 KB |
