The use of epitaxial IGBT in ZCQR (Zero Current Quasi Resonant) Converters needs the optimisation of both the device structure and of the working conditions.
The most critical issue is the life time of minority carriers in the epitaxial layer which involves a trade-off between static and dynamic performances of the IGBTs.
A correct design of the converter contributes also improving the working condition of the IGBT so reducing the switching losses.
This paper investigates methods of reducing IGBT power losses in a ZCQRC and shows how a correctly adjusted lifetime makes a 1000V epitaxial IGBT suitable for operation at high current and high frequency.
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