Modelling mobility degradation due to carriier-carrier scattering is of utmost importance for the analysis and simulation of power bipolar devices. Unfortunatelly, there is a large disagreement among the several theoretical mobility models available in literature. In addition, the experimental approaches proposed up to date for mobility extraction are based on measurements performed on thick p-i-n diodes, resulting in large power dissipation with significant device heating and rough estimation of injection level.
In this paper we present a new approach to measure the conductivity mobility dependence on the injection level, based on electrical measurements performed on a three-terminal test structure. The new technique overcomes most of the intrinsic limitations of previously proposed approaches and has the unique capability of extracting the injection level dependence of both hole and electron mobilities.
Two-dimensional numerical simulations and experimental results obtained both on n-type and p-type specimens are presented and compared to existing analytical mobility models.
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