This paper is aimed at the analysis of the electrical characteristics of non-punch-through EST structures. The operation mode and the transient process are studied by means of 2D numerical simulations. Standard and shorted anode test structures were fabricated with a conventional IGBT process technology, and their characteristics are compared with those of IGBT abd BRT structures. It is shown the improvement of the EST turn-off time when including the shorted anode structure, and the dependence of the maximum controllable current on the device geometrical dimensions.
| Filename: | EPE Journal - 07-1-2 - 1 - Paper Flores |
| Filesize: | 523.3 KB |
