The advent of high power density components has required investigation of innovative techniques for removing heat from this devices. With regard to power electronics fields, the definition of the current calibre is directly linked to its thermal environment. One of the aims of this work is to demonstrate that we can use an IGBT with on state current and losses higher than the values given by the manufacturers. We have opted for placing circular channels under an IGBT chip because this solution presents good performances and is easily realisable. In a first time, we analyse the thermal behaviour of this setup, and give the governing laws. Then, we simulate the setup on a finite elements program in order to quantify the temperature drop due to the conduction. Finally, we compare these results with measurements realised on the previous described setup. During the measurements, we determine the junction temperature with a thermal sensitive parameter, and in a second time, it will be obtained with an infra red camera.
| Filename: | EPE Journal - 08-1-2 - 2 - Paper Meysenc |
| Filesize: | 91.06 KB |
