In this paper, both experimental and simulation results, showing the effects of junction temperature, forward current and the rate of fall of forward current, or commutating di/dt on the reverse recovery behaviour of modern fast power diodes are presented. The main parameters used to characterise the reverse recovery performance of a semiconductor diode, are the reverse recovery change, peak recovery current and reverse recovery time. The diode snappiness phenomenon due to a current chop-off during reverse recovery, was also investigated and linked with the above parameters.
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