As a thyristor, the MCT (MOS Controlled Thyristor) is not sensitive to dV/dt if the base emitter junction of one of its inner transistor is shorted. However for the MCT, this requires sufficiant gate control voltage. This condition is not satisfied in some power switching applications (e.g. static relay) when power and control circuits are simultaniously switched on.
This paper presents and analyses the dV/dt susceptibility of a PMCT, with a capability of 75 A - 600 V, under low control signal and with temperature influence.
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