The work presented in this paper is based upon infrared (I.R.) imaging and the transient thermal impedance method. The first method provide thermal temperature resolution lower than 3°C and spatial resolution close to 15 um. The I.R. experimental results are compared to the usual transient thermal impedance technique. The analysis of these methods points out the limitations of the two approaches and gives further information on the possibilities of these methods. This dual approach has been illustrated by thermal behaviour studies of bipolar power transistors and IGBT.
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