| Abstract |
We design and optimise high voltage transistors, fully compatible with a standard 5V
CMOS technology (55Vfor PMOS and 70Vconcerning NMOS). Introducing a lightly doped
and deeply diffused well around the drain in order to increase its breakdown voltage makes
the high voltage transistors.
Our first task was to create a simulation model for the high voltage transistor, using a
bidimensional (2D) numerical process code . A few adjustments were made in order to match
the model with reality. Then, we simulated the electrical behaviour of the transistor, using a
2D device simulator. This enabled us to understand some of the physical phenomena related
to high voltage and find solutions to improve the electrical characteristics of the device,
which are realised indeed. It is a simple and low cost solution, which can be applied to many
low voltage technologies. |
