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A New Lateral DMOSFET Structure with Extremely Reduced On-Resistance and Enhanced Breakdown Voltage
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| Author(s) |
M. Zitouni; F. Morancho; P. Rossel; H. tranduc; J. Buxo; I. Pagès |
| Abstract |
In this paper, a new concept of lateral DMOSFET for Smart Power Integrated Circuits is proposed, in which a vertical trench oxide is used under the gate end in the drift region, and lateral burried oxide is used in the vertical DMOSFET. |
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| Filename: | EPE1999 - PP00528 - Zitouni.pdf |
| Filesize: | 220.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-25 by System |
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