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   Static vs. Dynamic Characterization of p-GaN HEMTs: Discrepancies in Electrical Characteristics and their Dependence on Bias History   [View] 
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 Author(s)   Ludovic ROCHE, David TRÉMOUILLES, Emmanuel MARCAULT, Corinne ALONSO 
 Abstract   Quasi-static electrical characteristics of p-GaN HEMTs fluctuate with bias history. This study evidences that dynamic operation is fortunately highly reproducible without pre-conditioning. The original experimental setup highlights that quasi-static data alone is insufficient for modeling dynamic behavior, while allowing precise detection of discrepancies, enabling improved transient modeling. 
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Filename:0309-epe2025-full-15325282.pdf
Filesize:464 KB
 Type   Members Only 
 Date   Last modified 2025-08-31 by System