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SiC MOSFET turn-off overvoltage measurement
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| Author(s) |
Mikel GALDEANO, Ernesto Luis BARRIOS, David ELIZONDO-MARTINEZ, Pablo SANCHIS |
| Abstract |
Selecting the appropriate measurement system is crucial in power electronics. This is especially important during MOSFET's turn-off process, where it is essential to measure the voltage rise and accurately capture the peak overvoltage. During turn-off, the interaction between the MOSFET and the parasitic element of the PCB creates a resonance. This phenomenon leads to an overvoltage, which peaks at the resonance frequency and can potentially damage the device. This paper discusses the characteristics of the measurement system needed to capture the peak overvoltage accurately. A step-by-step guide is proposed to ensure the correct selection of the probe and its correct use. This guide is experimentally validated on a three-level converter, where drain-source voltage measurements have been performed with and without a ground reference. The drain to source measurement method proposed in this paper is accurate, cost-effective and capable of minimizing induced noise. |
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| Filename: | 0261-epe2025-full-11430976.pdf |
| Filesize: | 1.029 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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