| |
Modeling and Evaluating GaN HEMTs for Efficient Multicell Battery Balancing with Dual-Active Bridge Converters
| [View]
[Download]
|
| Author(s) |
Robert Alfie PEÑA, Boud VERBRUGGE, Omar HEGAZY |
| Abstract |
This paper evaluates the feasibility of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) in battery active balancing circuits. A comparative analysis of GaN models, including loss and efficiency, is presented, which demonstrates the superior performance of GaN-based solutions and highlights its potential in efficient and reliable battery management systems (BMSs). |
| Download |
| Filename: | 0285-epe2025-full-21300709.pdf |
| Filesize: | 1.025 MB |
|
| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
| |
 |