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Measurement Techniques of Threshold Voltage Shift and Recovery in GaN e-HEMTs
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| Author(s) |
Burhan ETOZ, Arkadeep DEB, Jose ORTIZ-GONZALEZ, Layi ALATISE |
| Abstract |
This paper presents two different techniques of threshold voltage shift (_VTH) and recovery characterisation in GaN e-HEMTs. The first technique applies a stressing gate voltage (VGS) of defined magnitude and duration and then measures a _VTH at different time intervals by shorting the gate-to-drain terminals of the e-HEMT while passing a sensing current trough the drain-source. In the second technique, after the VGS stress, a sensing current through the 3rd quadrant of the GaN e-HEMT is used to measure the 3rd quadrant voltage as an indicator of _VTH. Both measurements show the same trends. With positive VGS stress, _VTH is positive (due to electron capture at the p-GaN/AlGaN interface) and then becomes negative over time due to faster electron release than hole release. The magnitude of the initial positive _VTH is proportional to the VGS stress while the recovery rate is inversely proportional of VGS stress. |
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| Filename: | 0258-epe2025-full-11312728.pdf |
| Filesize: | 566.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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