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Maximize advantages in hard and soft-switching applications with optimal use of a modern SiC MOSFET with low output capacitance
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| Author(s) |
Jaeeul YEON, Syeda Qurat ul ain AKBAR, Qibin WU |
| Abstract |
Silicon carbide (SiC) MOSFETs have superior properties at high voltage and high power compared to silicon (Si) devices in almost all aspects due to their material advantages such as three times larger band gap, three times larger thermal conductivity, ten times higher critical electric field, two times higher saturation velocity and so on. SiC MOSFETs can thus significantly improve the performance of the system. In addition to the well-known advantages of SiC MOSFETs over Si MOSFETs and IGBTs, a deeper understanding and right usage of SiC MOSFETs can help enhance device performance and maximize system value propositions. In this paper, a parameters-oriented approach is proposed to select the right SiC MOSFET device corresponding to the requirements of each application. The proposed approach has been validated by PLECS simulation results of representative hard and soft switching applications. |
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| Filename: | 0176-epe2025-full-12300612.pdf |
| Filesize: | 480.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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