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High temperature characterizations of a monolithic 900 V GaN power device for current source inverter applications
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| Author(s) |
Van-Sang NGUYEN, René ESCOFFIER, Stephane CATELLANI, Anthony BIER |
| Abstract |
Based on the recent works [1-4] on the current source inverter for photovoltaic (PV) application with Silicon Carbide (SiC) devices, this work presents the design and the characterizations of a monolithic GaN (Gallium Nitride) device where the GaN transistor and the diode in series connection are built up on a single chip for a specific current source inverter topology. This work presents the details of this monolithic 900 V GaN device in the first section, and then the static characterizations by using of an automatic industrial equipment (B1506 from Keysight) with a high temperature thermostream will be shown in the second section. A specific double pulse test-bench is detailed for high temperature dynamic characterization with the high speed current and voltage probes, this monolithic GaN device can be heated-up locally up to 175°C by using an infrared beam station. |
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| Filename: | 0183-epe2025-full-10082335.pdf |
| Filesize: | 1.52 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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