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Effects of Removing Bottom-side Copper in Baseplate-less Power Modules
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| Author(s) |
Nikolaj KRISTENSEN, Jakob IVERSEN DEICHGRAEBER, Kerim BRACKOVIC, Szymon BECZKOWSKI, Stig MUNK-NIELSEN, Asger BJØRN JØRGENSEN |
| Abstract |
Performance of SiC MOSFETs are limited by theinherent parasitic elements originating from thepackaging structure. In this paper, the parasiticcapacitance of a 1.2 kV SiC MOSFET half-bridgepower module is significantly reduced by removingthe bottom-side copper, and the influence onits electrical and thermal performance is experimentallyevaluated. Finally it is concluded thateven though the modified module show significantadvantages in turn-on switching energy, anincrease in turn-off energy offsets it while alsoachieving a worse thermal performance. |
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| Filename: | 0190-epe2025-full-17293604.pdf |
| Filesize: | 1.425 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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