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Development of Integrated Functions in GaN
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| Author(s) |
Yovan Andyka MARCELINO, René ESCOFFIER, Bruno ALLARD |
| Abstract |
This paper takes advantages of Gallium Nitride (GaN) as an ideal material in the development of electronic devices for high power and frequency applications. The paper details the circuit design and implementation of logic and analogue gates using a GaN-on-SI, non isolated proprietary technology to create a gate driver circuit for driving and instrumenting wide-gap power transistors. |
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| Filename: | 0138-epe2025-full-17311981.pdf |
| Filesize: | 1.648 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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