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Design Considerations and Validation of a GaN e-HEMT-Based Cryogenic Power Converter
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| Author(s) |
Jisun HAM, Junyeol MAENG, Chaemin IM, Dongsu SEO, Jaheum KOO, Seungyong HAHN, Shenghui CUI |
| Abstract |
As efforts to reduce CO2 emissions grow, cryogenic power electronic converters are gaining attention for applications in electric propulsion, aerospace, and superconducting technologies. This paper presents the design and experimental validation of a power converter using GaN enhancement-mode high electron mobility transistors (e-HEMTs) optimized for cryogenic environments. Losses and efficiency are compared at room temperature (RT) and cryogenic temperature (CT), highlighting the influence of temperature on device characteristics and converter performance. Results show significant loss reductions at CT, with air cooling for RT testing and liquid nitrogen for CT experiments. These findings demonstrate the viability of GaN e-HEMT-based converters in cryogenic applications. |
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| Filename: | 0166-epe2025-full-17283491.pdf |
| Filesize: | 2.944 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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