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Comprehensive Analysis of High Bandwidth Converters Based on SiC Technology for Automotive and Aircraft Applications
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| Author(s) |
Israel DA COSTA, Bernardo COGO, Lenin MORAIS |
| Abstract |
This paper explores the influence of semiconductortechnology on the bandwidth of power converters,with a particular focus on the loss mechanisms ofSilicon Carbide (SiC) MOSFETs and the non-idealities ofswitching cells. A model for the harmonic content as afunction of switching frequency to evaluate the potentialbandwidth limits based on the total harmonic distortion(THD) of the output current is introduced. Given that therelationship between bandwidth and switching frequencyis directly proportional to the THD limit of the outputcurrent, it becomes crucial to investigate the temperaturelimitations and loss mechanisms of the components usedwithin the switching cell to ensure a viable converter. Bothsimulation and experimental results are employed to verifythe accuracy of loss models and evaluate the relationshipbetween THD and switching frequency, considering ripplecurrent, the effect of output inductance parasitic capacitance,the saturation of the magnetic core, as well as theimpact of dead time. |
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| Filename: | 0222-epe2025-full-14380065.pdf |
| Filesize: | 1.612 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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