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Characterization of an Integrated GaN Driver for Power Switching Applications
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| Author(s) |
Benedikt KOHLHEPP, Houssam HALHOUL, Nick WIECZOREK, Xiaomeng GENG, Lars SCHELLHASE, Oliver HILT, Sibylle DIECKERHOFF |
| Abstract |
Modern GaN-HEMTs require appropriate driving circuits to enable fast switching. Thus, monolithic integration of power switches and gate drivers is necessary. Therefore, this paper demonstrates a GaN driver to control a GaN power switch. Besides static and pulsed characterization, the driver's performance is validated through continuous switching tests, demonstrating effective operation with turn-on and turn-off times of an emulated load of 1.68 ns and 1.84 ns, respectively. |
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| Filename: | 0040-epe2025-full-15523579.pdf |
| Filesize: | 590 KB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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