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Voltage class comparison of 3.3 kV SiC and 6.5 kV SiC Devices in the Application of HVDC Converters
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| Author(s) |
Lukas BERGMANN, Marcus WAHLE, Mark-M. BAKRAN |
| Abstract |
This work contains a comparison of voltage classes for High Voltage Silicon Carbide devices in the application of Multilevel converters. First a theoretical analysis on device technology parameters is executed to predicate the optimum voltage class of Silicon Carbide devices for highest output power. After this a comparison for static and dynamic device characteristics is performed in a scaled hardware test setup. This data is used for a final converter system benchmark in a loss simulation tool. Furthermore the potential impact of Silicon Carbide super junction devices on the application is discussed based on a previous paper. |
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| Filename: | 0005-epe2023-full-15161889.pdf |
| Filesize: | 1.398 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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