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Thermal Characterization of Packaged SiC Devices for High-Temperature Applications
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| Author(s) |
Varaha Satya Bharath KURUKURU, Md Nazmul HASAN, Roberto PETRELLA |
| Abstract |
Effective thermal management is crucial for the high-temperature operation of silicon carbide (SiC) devices, as the available thermal margin for these devices is limited. In addition, the temperature affects the thermal properties of packaging materials, such as thermal conductivity and specific heat, leading to variations in the thermal performance of the packaged semiconductor. Thus, precise thermal analysis is necessary to ensure steady and dependable operation of SiC devices in high-temperature environments. To fulfill this need, this study introduces the thermal characterization of packaged SiC devices for high-temperature applications. |
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| Filename: | 0548-epe2023-full-17451281.pdf |
| Filesize: | 2.74 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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