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Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. VSD(T)
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| Author(s) |
Nick BAKER, Szymon BECZKOWSKI, Francesco IANNUZZO, Andy LEMMON, John AUSTIN, Lauren OSTRANDER |
| Abstract |
In this paper we compare on-chip RTD sensors and the VSD(T) method for temperature measurement of multi-chip SiC MOSFET modules. We find that the average temperature across multiple chips measured via on-chip RTDs correlates closely with the VSD(T). However, the minimum and maximum chip temperature changes according to the module's operating conditions. This cannot be detected by the VSD(T) method. In a half-bridge module with 4-chips per switch position, we apply two operating conditions that give the same measured temperature via VSD(T). The maximum chip temperature, measured via the on-chip RTD, deviates over 5°C. This may have implications for power cycling lifetime on multi-chip power modules. We also demonstrate the use of the on-chip RTDs in an IGBT inverter. |
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| Filename: | 0398-epe2023-full-05435234.pdf |
| Filesize: | 2.692 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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