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Switching a eMode GaN HEMT under conditions of an inverter module for electrical vehicles (EV)
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| Author(s) |
Dominik NEHMER, Maximilian HEPP, Wolfgang WONDRAK, Mark-M. BAKRAN |
| Abstract |
In this paper the switching behavior of aeMode GaN device under conditions of a power modulefor electrical vehicles will be presented. During turn-offof the passive switch parasitic turn-on (PTO) can occur.The PTO will lead to higher losses especially in the lowload dominated WLTP cycle. An advanced version of aMiller clamping circuit to prevent PTO will be shown. Thiscircuit will reduce the losses significantly. A version withloss optimized PTO, higher gate resistance and with Millercircuit will be compared. The switching speed with Millerclamping is limited by the overvoltage. The conditionwith the highest overvoltage will be identified, which isnecessary for the selection of the external gate resistor.To prevent PTO a lower drive voltage is also beneficial.However, this leads to a high reverse voltage drop of theGaN due to its reverse conduction characteristics. Thelosses in the WLTP cycle are high, which will be shownfor different drive voltage and turn-on delays. |
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| Filename: | 0258-epe2023-full-16310818.pdf |
| Filesize: | 1.688 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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