| |
Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant
| [View]
[Download]
|
| Author(s) |
Matthieu MASSON, Marc COUSINEAU, Nicolas ROUGER, Frédéric RICHARDEAU |
| Abstract |
In this paper, the 3rd quadrant behavior of a 1.2 kV SiC MOSFET without additional anti-parallel diode is investigated. More specifically, the effect of the gate-source voltage on the reverse conduction is presented, and shows a strong dependency even for a gate voltage varying below the threshold voltage. The static characterization is compared to three other types of MOSFETs that present a stronger reverse current path due to their architectures. A dynamic characterization is also performed to describe the transition between the body-diode conduction and the channel reverse conduction within the 3rd quadrant (a.k.a. synchronous rectification). Both static and dynamic behaviors are compared to the device's LTspiceTM model and highlights the differences between experiment and simulation in 3rd quadrant as the gate voltage below the threshold voltage is not taken into account in this model. Insights towards a more precise modeling for this operating region are discussed at the end of the article. |
| Download |
| Filename: | 0426-epe2023-full-14000812.pdf |
| Filesize: | 3.722 MB |
|
| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
| |
 |