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Resonant Gate Drive Circuit for Parallel Connected MOSFETs
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| Author(s) |
Helong LI, Ramkrishan MAHESHWARI, Langlang YU, Prashant SURANA, Thomas EBEL |
| Abstract |
Parallel connected MOSFETs are required to increase the power rating of power electronic converters. It is required to maintain equal current sharing among the parallel connected MOSFETs during conduction and transients. To reduce the current unbalance in circuits, coupled inductors are typically used. Utilizing this concept, a couple inductor based resonant gate drive circuit is proposed in the paper for parallel connected MOSFETs. The proposed gate drive has a coupled inductor connected to the gate terminals of the MOSFETs. This helps reducing any gate side mismatch between two MOSFETs. This helps in current sharing between MOSFETs during switching transients. The details of the working of the circuit are explained in the paper. The proposed circuit is verified and validated by simulation and experimental results. |
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| Filename: | 0423-epe2023-full-11022510.pdf |
| Filesize: | 828.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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