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Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences
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| Author(s) |
Patrick HEIMLER, Mohamed ALALUSS, Christian SCHWABE, Xing LIU, Josef LUTZ, Thomas BASLER |
| Abstract |
In this paper, the threshold voltage shift during power cycling test for discrete SiC-MOSFET devices in TO-247 package from three different manufacturers with the same blocking capability of 1200 V is investigated. The temperature dependence of the threshold voltage plays a significant role in the interpretation of the results, since a change in Vth can also influence common TSEP (temperature-sensitive electrical parameter) measurement methods. The tested devices have shown no deterioration of the solder layer, but degradation of the bond wires in the failure analysis. |
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| Filename: | 0118-epe2023-full-12542460.pdf |
| Filesize: | 2.113 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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