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Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours
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| Author(s) |
Xuyang LU, Arnaud VIDET, Nadir IDIR, Vlad MARSIC, Petar IGIC, Soroush FARAMEHR |
| Abstract |
This work investigates the power GaNHEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (Coss) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (Ciss) of GaN-HEMTs. Moreover, thegate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high efficiency GaNHEMTs power module design. |
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| Filename: | 0511-epe2023-full-19401816.pdf |
| Filesize: | 640.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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