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Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs
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| Author(s) |
Kenji HATORI, Kohei EBIHARA, Kazufumi ISHIMOTO, Ryo TSUDA, Nils SOLTAU, Shiori IDAKA, Eugen WIESNER, Stefan SCHÖNEWOLF, Michael HANF, Oskar SCHUSTER |
| Abstract |
Recently transition from Si-IGBT module to SiC-MOSFET modules in the railway application is ongoing. Although humidity issue is one of the main concerns, humidity robustness of high voltage SiC modules has not been well investigated. In this paper, acceleration factors of the HV-H3TRB test on 3.3 kV SiC-SBDs are investigated. This investigation is based on varied condition of temperature, relative humidity, and voltage. Also, the result is compared with that of HVIGBT. |
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| Filename: | 0173-epe2023-full-16595502.pdf |
| Filesize: | 639.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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