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Influence of the r\_{ds,on} temperature dependency of SiC MOSFETs on the optimal switching cell mechanical layout
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Author(s) |
Georgios PAPADOPOULOS, Jürgen BIELA |
Abstract |
The design of power electronic systems is typically performed based on optimisation procedures. Inthis paper, the influence of the temperature dependant on-state resistance on the optimal switching cell mechanical layout is investigated. A standardised half-bridge switching cell is modelled and optimised to discuss the importance of establishing general layout recommendations. |
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Filename: | 0082-epe2023-full-11362442.pdf |
Filesize: | 1.022 MB |
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Type |
Members Only |
Date |
Last modified 2023-09-24 by System |
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