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   Influence of the r\_{ds,on} temperature dependency of SiC MOSFETs on the optimal switching cell mechanical layout   [View] 
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 Author(s)   Georgios PAPADOPOULOS, Jürgen BIELA 
 Abstract   The design of power electronic systems is typically performed based on optimisation procedures. Inthis paper, the influence of the temperature dependant on-state resistance on the optimal switching cell mechanical layout is investigated. A standardised half-bridge switching cell is modelled and optimised to discuss the importance of establishing general layout recommendations. 
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Filename:0082-epe2023-full-11362442.pdf
Filesize:1.022 MB
 Type   Members Only 
 Date   Last modified 2023-09-24 by System