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Influence of parasitics of components and circuit on switching losses of power SiC and GaN transistors in power converter applications
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Author(s) |
Pawel GÓRECKI, Krzysztof GÓRECKI, Kalina DETKA, Vincenzo D'ALESSANDRO |
Abstract |
In this paper, the influence of parasitic parameters of components and circuit on switching energy losses of wide-bandgap power transistors in power converter applications is examined. Simulations are performed to identify the individual importance of each parameter. |
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Filename: | 0378-epe2023-full-11054757.pdf |
Filesize: | 259 KB |
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Type |
Members Only |
Date |
Last modified 2023-09-24 by System |
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