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   Influence of parasitics of components and circuit on switching losses of power SiC and GaN transistors in power converter applications   [View] 
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 Author(s)   Pawel GÓRECKI, Krzysztof GÓRECKI, Kalina DETKA, Vincenzo D'ALESSANDRO 
 Abstract   In this paper, the influence of parasitic parameters of components and circuit on switching energy losses of wide-bandgap power transistors in power converter applications is examined. Simulations are performed to identify the individual importance of each parameter. 
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Filename:0378-epe2023-full-11054757.pdf
Filesize:259 KB
 Type   Members Only 
 Date   Last modified 2023-09-24 by System