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Improvement Method of Voltage sharing Performance for Series-Connected GaN devices based on an Active Surge Absorber Circuit
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| Author(s) |
Yuki ITOGAWA, Shigeki HARADA, Takahiro URAKABE, Hideaki FUJITA |
| Abstract |
This study discusses series-connected gallium nitride (GaN) devices with active surge absorbers (ASAs). To respond to high-speed switching of GaN devices, we propose a circuit scheme using passive elements with a simple structure. The proposed circuit scheme improves the voltage sharing ratio of GaN devices in series, and realizes high breakdown voltage and low loss by series-connected GaN devices. In this study, the theoretical improvement of the proposed circuit scheme was derived and tested by simulation. As a result, it was confirmed that the unbalance of the voltage sharing ratio can be improved by 87.5\% compared to the case without the ASAs circuit. |
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| Filename: | 0167-epe2023-full-12255590.pdf |
| Filesize: | 693.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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