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Generic Semi-Physical SiC MOSFET Model for the Simulation of Switching Processes
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| Author(s) |
Patrick HOFSTETTER, Viktor HOFMANN, Mark-M. BAKRAN |
| Abstract |
This paper proposes a simple generic semi-physical SiC MOSFET model for the simulation of switching processes. This can be used for the optimization of losses or to test gate drive techniques. The model only needs parameters, which can be obtained from the datasheet. The Common Source elements and dynamic transfer characteristics are the only exceptions and can easily be measured. The proposed model is _nally compared to switching measurements and to a SPICE model of the manufacturer to prove the applicability and accuracy. |
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| Filename: | 0320-epe2023-full-14534459.pdf |
| Filesize: | 1.578 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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