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General Analytical Model for SiC MOSFETs Turn-Off Loss Considering No Miller Plateau
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| Author(s) |
Shijie SONG, Han PENG, Xinbo CHEN, Xin HAO |
| Abstract |
Conventional analytical loss models based on flat Miller plateau cannot predict the turn-off loss precisely under quasi-zero turn-off loss condition, where SiC device's channel current has dropped to zero before the completion of voltage transient. To solve this problem, this article presents the criterion of determining turn-off condition and a general analytical loss model for SiC MOSFETs turn-off loss considering no Miller Plateau. Experiments are carried out and the results verify the analysis. |
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| Filename: | 0237-epe2023-full-15050615.pdf |
| Filesize: | 1.25 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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