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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Efficient Power Vertical Integration - Basic Concept and Technology
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| Author(s) |
Ralph MAKHOUL, Nour BEYDOUN, Abdelhakim BOURENNANE, Luong Viêt PHUNG, Lazar MIHAI, Frédéric RICHARDEAU, Philippe GODIGNON, Dominique PLANSON, Hervé MOREL, David BOURRIER |
| Abstract |
A full monolithic integration in multi-terminal SiC dies of a generic H-bridge power converter (800V/10A) consisting of dual N-type vertical MOSFET switches within only two multi-terminal chips is proposed. Innovative two multi-terminal monolithic power SiC-chips are introduced and studied by 2D Sentaurus TCAD simulations. The first one integrates the high-side row switches of the bridge and the second one integrates the low-side row switches. Static and dynamic operating modes were validated through 2D-Mixed-Mode simulations. Main new process bricks allowing back-side insulating trenches based on plasma combined with photo-electrochemical etching are experimentally evaluated for the first time on power device SiC wafer. |
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| Filename: | 0478-epe2023-full-14352204.pdf |
| Filesize: | 1.02 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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