| |
Fast Switching of GaN Transistors using a Boosted Gate Voltage
| [View]
[Download]
|
| Author(s) |
Edward SHELTON, Dan ROGERS, Patrick PALMER |
| Abstract |
This paper presents a gate-driving strategy for achieving fast switching edges from GaN HEMT transistors. Switching losses can be reduced by using zero-ohms external gate resistance, whilst further reductions are achieved by overcoming the limitations of internal gate resistance with gate voltage boosting during key regions of the switching transition. |
| Download |
| Filename: | 0316-epe2023-full-17590412.pdf |
| Filesize: | 1.829 MB |
|
| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
| |
 |