| Abstract |
This paper proposes a novel data sheet based, fully analytical turn-on switching loss model for a SiC MOSFET and Schottky diode half-bridge including parasitics. The proposed model shows similar accuracy (error around 28\%) compared to analytical switching loss models without closed-form analytical equations in the literature, while reducing the computational effort by more than 20 times. In addition, the proposed model shows the best accuracy (error around 12.4\%) compared to other fully analytical switching loss models in the literature, which is verified by using measured device characteristics instead of data sheet information. The accuracy of the proposed model is comprehensively verified by double pulse tests using 5 different SiC MOSFET (with different structures) and Schottky diode pairs from different manufacturers. |
