| |
Event-Triggered Gate Drive for a 1.7 kV Si-SiC Hybrid Switch with IGBT-like Short-Circuit Robustness
| [View]
[Download]
|
| Author(s) |
Felix KAYSER, Hans-Günter ECKEL |
| Abstract |
A novel event-triggered gate drive for a Si-SiC hybrid switch is proposed and validated with measurements. The hybrid switch consists of paralleled Si-IGBT and SiC-MOSFET and requires a dedicated gate drive strategy to efficiently combine both semiconductor technologies. The proposed gate driver provides zero-voltage switching for the SiC MOSFET for decreased switching losses. By driving both switches out of only one external gate signal, it allows the usage of a standardpower module housing for a hybrid switch. Triggering the turn-on of the SiC-MOSFET only at low VCE, the gate driver ensures an IGBT-like short-circuit behavior of the hybrid switch. Therefore a non-robust SiC MOSFET with reduced Rds,on can be used. |
| Download |
| Filename: | 0442-epe2023-full-15145517.pdf |
| Filesize: | 2.448 MB |
|
| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
| |
 |