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Effect of the Forward and Reverse Conduction Resistance of SiC MOSFET on the Harmonic Voltage of the Full-Bridge Inverters of Wireless Power Systems for Electric Vehicles and Its Suppression Method
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| Author(s) |
Tatsuya YANAGI, Ken NAKAHARA, Osamu SHIMIZU, Hiroshi FUJIMOTO |
| Abstract |
This paper clarifies the mechanism behind harmonic generation, linked to device characteristics in the output voltage of phase-shift controlled inverters. The primary cause is a fluctuation in conduction resistance related to dead time, validated by theoretical analysis, simulation, and empirical testing. These harmonics can be diminished by calibrating the resistance of switching devices to bring the forward and reverse resistance values into closer alignment. |
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| Filename: | 0207-epe2023-full-16032687.pdf |
| Filesize: | 680.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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