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Driving Cycle Power Loss Analysis of SiC-MOSFET and Si-IGBT Traction Inverters for Electric Vehicles
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| Author(s) |
Michael SCHLUETER, Marius GENTEJOHANN, Sibylle DIECKERHOFF |
| Abstract |
This paper presents the calculation process for a detailed and fast analysis of EV traction inverter losses applying either MOSFETs or IGBTs in arbitrary driving cycles. An open-source tool was developed and every step of the calculation - starting with the driving cycle, the driving resistances, the set points of the permanent magnet synchronous motor, the modulation scheme, and finally the inverter loss calculation - is presented. A SiC-MOSFET and a Si-IGBT-based inverter with similar ratings and identical housing are compared exemplarily for various driving cycles. Static and dynamic losses derived from double-pulse tests of the SiC-MOSFET and continuous measurements from a dynamometer test bench are compared to datasheet values and calculation results. In all analyzed operation points, the SiC-MOSFET has lower losses than the Si-IGBT, although the performance advantage of the SiC-device is higher for driving cycles with a high amount of partial-load operation points. For high-power operation points or driving cycles with high power demands the advantage is less pronounced. |
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| Filename: | 0480-epe2023-full-09473036.pdf |
| Filesize: | 2.737 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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