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Design Consideration and Demonstration of Dual-Active Bridge Converter Using 13-kV SiC-MOSFETs Packaged in TO-268
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| Author(s) |
Yonghyun CHO, Cheng HUANG, Tomoyuki MANNEN, Takanori ISOBE |
| Abstract |
This paper discusses the feasibility of power electronic converters using high voltage SiC-MOSFETs with a TO-package for medium voltage applications. Characteristics of a 13-kV SiC-MOSFET packaged in TO-268 are reported. Design of dual active bridge (DAB) converters with the devices is discussed and experimental demonstrations are reported. |
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| Filename: | 0571-epe2023-full-19300228.pdf |
| Filesize: | 2.715 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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