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   Deadtime optimization eliminating snap-off of 3.3kV SiC MOSFET bodydiodes   [View] 
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 Author(s)   Andreas MAERZ, Stefan SCHOENEWOLF, Andreas NAGEL, Michael RAUH, Mark-M. BAKRAN 
 Abstract   In this paper the bodydiode behavior of 3.3 kV SiC MOSFETs is analyzed under nominal and SOA conditions. At some operating points the reverse-recovery current of the bodydiode shows a snappy behavior. The effect of a device control method to achieve snap-off free diode turn-off and increased output power performance of the converter is shown. 
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Filename:0146-epe2023-full-16421810.pdf
Filesize:811.7 KB
 Type   Members Only 
 Date   Last modified 2023-09-24 by System