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Deadtime optimization eliminating snap-off of 3.3kV SiC MOSFET bodydiodes
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Author(s) |
Andreas MAERZ, Stefan SCHOENEWOLF, Andreas NAGEL, Michael RAUH, Mark-M. BAKRAN |
Abstract |
In this paper the bodydiode behavior of 3.3 kV SiC MOSFETs is analyzed under nominal and SOA conditions. At some operating points the reverse-recovery current of the bodydiode shows a snappy behavior. The effect of a device control method to achieve snap-off free diode turn-off and increased output power performance of the converter is shown. |
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Filename: | 0146-epe2023-full-16421810.pdf |
Filesize: | 811.7 KB |
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Type |
Members Only |
Date |
Last modified 2023-09-24 by System |
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