| Abstract |
In this paper, the power conversion efficiency of a DC-DC converter using a wide bandgap (WBG) switching device in the zero-voltage switching (ZVS) region was analyzed. The efficiency characteristics of the converter vary depending on whether ZVS is achieved or not, and the study analyzes the ZVS operation region based on the characteristics of representative switching devices, namely Si, SiC, and GaN.The analysis confirms that the WBG device with low parasitic output capacitance (Coss) requires lower load current for ZVS operation than the Si device. To verify this finding, the experiment was conducted on a 3kW class dual active bridge (DAB) converter, and the results were analyzed. The results show that using a WBG device enables ZVS operation at a lower load and higher efficiency compared to Si devices. |
