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An Active Gate Driver for Iteratively Optimizing the Switching Characteristics of SiC MOSFETs
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| Author(s) |
Johannes KUHN, Tobias ZEKORN, Kenny VOHL, Ralf WUNDERLICH, Stefan HEINEN |
| Abstract |
This paper presents an active gate driver for silicon carbide power MOSFETs. The driver stage is based on digitally controlled current sources with a time resolution of 2 ns. A high-speed ADC is used to sample the voltage between the kelvin source and source terminal of the power MOSFET during the switching event. Thus, current ringing of the switching transition is used as an optimization criterion for iterative optimization of the switching characteristics. The proposed active gate driver is able to reduce both current and voltage ringing significantly. It achieves a voltage overshoot reduction of up to 86\% without a prolongation of the switching event and allows tracking of changing operating points. |
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| Filename: | 0529-epe2023-full-13570467.pdf |
| Filesize: | 985.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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