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A Simple Analytical Model for The Reverse-Recovery Overvoltage and Oscillation In a SiC MOSFET Half-bridge Module
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| Author(s) |
Pham Ha Trieu TO, Hans-Günter ECKEL |
| Abstract |
The paper introduces a simple analytical model for the overvoltage and the oscillation on the body's diode of the SiC MOSFET module during its reverse-recovery. The model provides a precise estimation of the overvoltage and the oscillation which can be used for overvoltage protection or the turn-on losses and oscillation optimization. |
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| Filename: | 0010-epe2023-full-12493109.pdf |
| Filesize: | 580.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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