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Turn-on Losses Optimization for Medium Power SiC MOSFET Half-bridge Module
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| Author(s) |
Pham Ha Trieu TO |
| Abstract |
This paper explains the mechanism of the parasitic turn-on (PTO) effect in a medium power SiCMOSFET half-bridge module and the relation between it and the reverse-recovery process ofMOSFET's body diode. Based on that knowledge, a detail practical turn-on losses optimizationprocess for medium power SiC MOSFET modules using PTO is presented. To quantify the stability ofthis method, some quantitative metrics are suggested to measure the critical values' sensitivity. Theexperimental measurements show that turn-on losses can be reduced 50\% lower than conventionaltuning method. |
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| Filename: | 0014-epe2022-full-15201521.pdf |
| Filesize: | 1.119 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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